Lecture Notes on Principles of Plasma Processing by Francis F. Chen

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By Francis F. Chen

Отличные лекции по физике плазмы с хорошими иллюстрациями. Один из авторов Ф.Ф. Чен хорошо известен среди специалистов по физ. плазмы. Некотрые книги были переведены на русский язык. Данные лекции написаны простым языком, студенты более-менее знающие англ. язык смогут читать без проблем. ------------------------------------------------------------- Why examine plasma processing? simply because we won't get alongside with no laptop chips and cellphones nowadays. approximately part the stairs in creating a semicon- ductor circuit require a plasma, and plasma machines ac- count number for many of the gear fee in a "fab ". layout- ers, engineers, and technicians want to know how a plasma behaves.

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Lecture Notes on Principles of Plasma Processing

Отличные лекции по физике плазмы с хорошими иллюстрациями. Один из авторов Ф. Ф. Чен хорошо известен среди специалистов по физ. плазмы. Некотрые книги были переведены на русский язык. Данные лекции написаны простым языком, студенты более-менее знающие англ. язык смогут читать без проблем. ------------------------------------------------------------- Why research plasma processing?

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4 5 = 52 µ m . 25 mm in thickness, and the sheath drop is about 5 × 5 = 25 V. 2. Child-Langmuir sheath. When a voltage is applied between the plates, the sheath drop cannot be 25 V on both plates; at least one of them must have a much larger sheath drop to take up the RF potential of hundred of volts that is applied. These large potential drops, much larger than KTe, occur in a layer called a Child-Langmuir sheath, that joins smoothly onto the Debye sheath and extends all the way to the wall. This differs from the Debye sheath because only one charged species, in this case ions, exists in the C-L sheath, the electrons having almost all been turned back before they reach it.

4. Applying an RF bias One cannot apply a DC bias to a wafer, since at least some of the layers deposited on the wafer are insulating. However, it is possible to impose a time-averaged DC bias with RF. At RF frequencies, the ions are too massive to follow the fluctuations and will flow to each wall with the same flux Γi. The electrons respond so fast that they can maintain a Maxwellian distribution at every phase of the RF. Thus, the sheath at each phase of the RF will be the same as a DC sheath at the instantaneous voltage of the electrode.

Currents in the plasma induce a back-emf into the antenna circuit, making the power supply work harder, and this extra work appears as plasma heat. The part of the back-emf that is in phase with the antenna current appears as an added antenna resistance, and the part that is 90° out of phase appears as added or reduced inductance. Normally, the plasma density is low enough that the currents in the plasma are too small to affect the inductance much. Since most power supplies must be matched to a 50-Ω load, a matchbox or tuning circuit is needed to transform the impedance of the antenna to 50Ω, even under changing plasma loads.

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